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11 b/g/n (XR819 chip
allowing it to withstand transient overloads
Despite its smaller size
Motor speed control with PWM
and a 10-bit ADC
K75EEH5 N-channel IGBT — 650V, 90A, 395W, TO-247, with anti-parallel diode Xl1509 5.0 5V 11 b/g/n (XR819 chipThe K75EEH5 is a high voltage N channel IGBT (Insulated Gate Bipolar Transistor) with an integrated anti parallel freewheeling diode, housed in the robust TO 247 through hole package. Rated at 650V collector emitter voltage and 90A continuous collector current at 25C, it is designed for demanding power switching applications including solar inverters, UPS systems, industrial motor drives, and induction heating equipment. With a low saturation voltage
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